Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar

Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, leakage current, and switching frequency. As a result, Si MOSFETs are replaced with SiC in industrial applications. However, there still not as modules customize for each application. To meet the high-power requirement custom applications, paralleling discrete is an essential solution. it comes technical challenges; inequality current sharing, different losses, transient characteristics, so forth. In this paper, detailed MATLAB®/Simulink® Simpscape model of MOSFET from datasheet simulation half-bridge circuit investigated. Furthermore, paper proposes implementation four-paralleled improved symmetric gate driver layout. Moreover, unique laminated busbar connected directly printed board (PCB) proposed increase capacity decrease parasitic effects. Finally, experimental results presented using 650 V (CREE) double-pulse test (DPT) circuit. The voltage overshoot problems applied solutions also presented.